Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, Sangheon Oh, Jeong-Hoon Kim, Yuhan Shi, Soumil Jain, Gopabandhu Hota, Erbin Qiu, Amelie L. Nagle, Ivan K. Schuller, Catherine D. Schuman, Gert Cauwenberghs and Duygu Kuzum

April, 2024

Nature Communications

https://www.nature.com/articles/s41467-024-46682-1

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Abstract

CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. We developed a filament-free, bulk switching RRAM technology to address these challenges. We systematically engineered a trilayer metal-oxide stack and investigated the switching characteristics of RRAM with varying thicknesses and oxygen vacancy distributions to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching at megaohm regime with high current nonlinearity, up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform and showcased edge computing by implementing a spiking neural network for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Citation Information

Text

author      J. Park and A. Kumar and Y. Zhou and S. Oh and J. H. Kim and Y. Shi
            and S. Jain and G. Hota and E. Qiu and A. L. Nagle and I. K. Schuller and
            C. D. Schuman and G. Cauwenberghs and D. Kuzum
title       Multi-level, forming and filament free, bulk switching trilayer {RRAM} for neuromorphic computing at the edge
journal     Nature Communications
year        2024
month       April
volume      15
url         https://www.nature.com/articles/s41467-024-46682-1
doi         10.1038/s41467-024-46682-1

Bibtex

@ARTICLE{pkz:24:mlf,
    author = "J. Park and A. Kumar and Y. Zhou and S. Oh and J. H. Kim and Y. Shi
                and S. Jain and G. Hota and E. Qiu and A. L. Nagle and I. K. Schuller and
                C. D. Schuman and G. Cauwenberghs and D. Kuzum",
    title = "Multi-level, forming and filament free, bulk switching trilayer {RRAM} for neuromorphic computing at the edge",
    journal = "Nature Communications",
    year = "2024",
    month = "April",
    volume = "15",
    url = "https://www.nature.com/articles/s41467-024-46682-1",
    doi = "10.1038/s41467-024-46682-1"
}