RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design
H. Das, M. Rathore, R. Febbo, M. Liehr, N. C. Cady and G. S. Rose
June, 2023
GLSVLSI - Great Lakes Symposium on VLSI
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Abstract
Memristors are a suitable candidate to design synapse circuits and neuromorphic systems. Due to device and voltage variability, operating a memristive device with reliability is a big challenge. To enhance the reliability of memristive synapse, RESET failure needs to be considered. In this work, we are focused on RESET failure modeling with RESET voltage variation. Here, the RESET failure is defined as hard failure of the memristive synapse due to a high RESET voltage being applied. The proposed Verilog-A model is derived based on experimental data collected from 1T1R devices, which are fabricated on 65 nm CMOS process. To enhance the reliability of system-level simulation, this device model will provide better guidelines to the designer. In addition, power consumption for a successful RESET operation is 7.065 μW at 1.5 V, which can RESET the memristor resistance from 5 kΩ to 200 kΩ.Citation Information
Text
author H. Das and M. Rathore and R. Febbo and M. Liehr and N. C. Cady and G. S. Rose
title {RFAM}: {RESET-Failure-Aware-Model} for {HfO2}-based Memristor to Enhance the Reliability of Neuromorphic Design
booktitle GLSVLSI - Great Lakes Symposium on VLSI
month June
year 2023
pages 131-136
publisher ACM
url https://dl.acm.org/doi/10.1145/3583781.3590210
doi 10.1145/3583781.3590210
Bibtex
@INPROCEEDINGS{drf:23:rfam,
author = "H. Das and M. Rathore and R. Febbo and M. Liehr and N. C. Cady and G. S. Rose",
title = "{RFAM}: {RESET-Failure-Aware-Model} for {HfO2}-based Memristor to Enhance the Reliability of Neuromorphic Design",
booktitle = "GLSVLSI - Great Lakes Symposium on VLSI",
month = "June",
year = "2023",
pages = "131-136",
publisher = "ACM",
url = "https://dl.acm.org/doi/10.1145/3583781.3590210",
doi = "10.1145/3583781.3590210"
}