Sherif Amer, Md Sakib Hasan, Md Musabbir Adnan, and Garrett S. Rose

October, 2018

IEEE Journal of the Electron Devices Society

https://ieeexplore.ieee.org/document/8490903

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Abstract

This paper proposes a compact SPICE phenomenological model for insulator metal transition (IMT) devices. The proposed model captures the interplay of electric field and Joule heating to effect a transition from a high resistance insulating state to a low resistance metallic state. The model is corroborated against experimental results and electrothermal simulations available in the literature. The proposed model is implemented in Verilog-A and is fully compatible with commercial SPICE simulators such as Spectre from Cadence, used in this paper. An IMT-based artificial neuron is then designed and simulated using the proposed IMT compact model and design expressions for the operation of the proposed neuron are derived. The simulation results agree with the expected neuron behavior as well as the simulation results of other similar neurons proposed in the literature. This paper will enable circuit designers to design and simulate IMT-based systems and help them explore the full potential of such novel devices.

Citation Information

Text

author      S. Amer and M. S. Hasan and M. M. Adnan and G. S. Rose
title       SPICE Modeling of Insulator Metal Transition: Model of the Critical Temperature
journal     IEEE Journal of the Electron Devices Society
volume      7
month       October
year        2018
pages       18-25
url         https://ieeexplore.ieee.org/document/8490903

Bibtex

@ARTICLE{aha:18:smi,
    author = "S. Amer and M. S. Hasan and M. M. Adnan and G. S. Rose",
    title = "{SPICE} Modeling of Insulator Metal Transition: Model of the Critical Temperature",
    journal = "IEEE Journal of the Electron Devices Society",
    volume = "7",
    month = "October",
    year = "2018",
    pages = "18-25",
    url = "https://ieeexplore.ieee.org/document/8490903"
}